Results

Export 63 results:
Sort by: Author Title Type [ Year (Desc)]
2011
Nayak, PK, Pinto JV, Goncalves G, Martins R, Fortunato E.  2011.  Environmental, Optical, and Electrical Stability Study of Solution-Processed Zinc-Tin-Oxide Thin-Film Transistors. J. Disp. Technol. . 7:640-643.
Chandra, S. V. Jagadeesh, Fortunato, Martins, Choi C-J.  2011.  Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices. Thin Solid Films. 520(14):4556-4558.
Branquinho, R, Veigas B, Pinto JV, Martins R, Fortunato E, Baptista PV.  2011.  Real-time monitoring of PCR amplification of proto-oncogene c-MYC using a Ta2O5 electrolyte-insulator-semiconductor sensor. Biosens. Bioelectron.. 28:44-49..
Goncalves, G, Grasso V, Barquinha P, Pereira L, Elamurugu E, Brignone M, Martins R, Lambertini V, Fortunato E.  2011.  Role of Room Temperature Sputtered High Conductive and High Transparent Indium Zinc Oxide Film Contacts on the Performance of Orange, Green, and Blue Organic Light Emitting Diodes. Plasma Process. Polym.. 8:340-345.
Goncalves A., Costa C., Pereira S., Correia N., M.M. S, Barbosa P.C., L.C. R, Henriques I., R. M, Fortunato E..  2011.  Study of electrochromic devices with nanocomposites polymethacrylate hydroxyethylene resin based electrolyte. Polym. Adv. Technol.. 23:791–795.
Elangovan, E, Saji KJ, Parthiban S, Goncalves G, Barquinha P, Martins R, Fortunato E.  2011.  Thin-Film Transistors Based on Indium Molybdenum Oxide Semiconductor Layers Sputtered at Room Temperature. IEEE Electron Device Lett.. 32:1391-1393.
Fortunato, E, Martins R.  2011.  Where science fiction meets reality? With oxide semiconductors! Phys. Status Solidi-Rapid Res. Lett. . 5:336-339.
2010
Olziersky, A, Barquinha P, Vila A, Pereira L, Goncalves G, Fortunato E, Martins R, Morante JR.  2010.  Insight on the SU-8 resist as passivation layer for transparent Ga2O3-In2O3-ZnO thin-film transistors. J. Appl. Phys.. 108(064505)
Lorenz, M, Lajn A, Frenzel H, Wenckstern HV, Grundmann M, Barquinha P, Martins R, Fortunato E.  2010.  Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films. Appl. Phys. Lett. . 97(243506 )
Barquinha, P, Pereira L, Goncalves G, Kuscer D, Kosec M, Vila A, Olziersky A, Morante JR, Martins R, Fortunato E.  2010.  Low-temperature sputtered mixtures of high-kappa and high bandgap dielectrics for GIZO TFTs. J. Soc. Inf. Disp. . 18
Fortunato, E, Figueiredo V, Barquinha P, Elamurugu E, Barros R, Goncalves G, Park SHK, Hwang CS, Martins R.  2010.  Thin-film transistors based on p-type Cu2O thin films produced at room temperature. Appl. Phys. Lett.. 96( 239902 )
Fortunato, E, Barros R, Barquinha P, Figueiredo V, Park SHK, Hwang CS, Martins R.  2010.  Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing. Appl. Phys. Lett. . 97(052105 )
Nayak, PK, Busani T, Elamurugu E, Barquinha P, Martins R, Hong Y, Fortunato E.  2010.  Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric. Appl. Phys. Lett. . 97(183504 )