Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films | invisible

Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

Citation:: Lorenz, M, Lajn A, Frenzel H, Wenckstern HV, Grundmann M, Barquinha P, Martins R, Fortunato E. 2010. Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films. Appl. Phys. Lett. . 97(243506 )