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Lorenz, M, Lajn A, Frenzel H, Wenckstern HV, Grundmann M, Barquinha P, Martins R, Fortunato E.\'a0 2010.\'a0\'a0Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films. Appl. Phys. Lett. . 97(243506 )\par \par }