@article {7445,
	title = {Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films},
	journal = {Appl. Phys. Lett. },
	volume = {97},
	year = {2010},
	author = {M. Lorenz and A. Lajn and H. Frenzel and H. V. Wenckstern and M. Grundmann and P. Barquinha and R. Martins and E. Fortunato}
}
