Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric | invisible

Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric

Citation:: Nayak, PK, Busani T, Elamurugu E, Barquinha P, Martins R, Hong Y, Fortunato E. 2010. Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric. Appl. Phys. Lett. . 97(183504 )