<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">P. K. Nayak</style></author><author><style face="normal" font="default" size="100%">T. Busani</style></author><author><style face="normal" font="default" size="100%">E. Elamurugu</style></author><author><style face="normal" font="default" size="100%">P. Barquinha</style></author><author><style face="normal" font="default" size="100%">R. Martins</style></author><author><style face="normal" font="default" size="100%">Y. Hong</style></author><author><style face="normal" font="default" size="100%">E. Fortunato</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric</style></title><secondary-title><style face="normal" font="default" size="100%">Appl. Phys. Lett. </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2010</style></year></dates><volume><style face="normal" font="default" size="100%">97</style></volume><issue><style face="normal" font="default" size="100%">183504 </style></issue></record></records></xml>