Publications

Export 36 results:
Sort by: Author Title Type [ Year  (Desc)]
2014
Gaspar, D., A. C. Pimentel, M. J. Mendes, T. Mateus, B. P. Falcão, J. P. Leitão, J. Soares, A. Araújo, A. Vicente, S. A. Filonovich, H. Águas, R. Martins, and I. Ferreira, "Ag and Sn Nanoparticles to Enhance the Near-Infrared Absorbance of a-Si:H Thin Films", Plasmonics, vol. 9, issue 5, pp. 1015–1023, 2014. AbstractDOI

Silver (Ag) and tin (Sn) nanoparticles (NPs) were deposited by thermal evaporation onto heated glass substrates with a good control of size, shape and surface coverage. This process has the advantage of allowing the fabrication of thin-film solar cells with incorporated NPs without vacuum break, since it does not require chemical processes or post-deposition annealing. The X-ray diffraction, TEM and SEM properties are correlated with optical measurements and amorphous silicon hydrogenated (a-Si:H) films deposited on top of both types of NPs show enhanced absorbance in the near-infrared. The results are interpreted with electromagnetic modelling performed with Mie theory. A broad emission in the near-infrared region is considerably increased after covering the Ag nanoparticles with an a-Si:H layer. Such effect may be of interest for possible down-conversion mechanisms in novel photovoltaic devices.

Neves, N., A. Lagoa, J. Calado, B. A. M. do Rego, E. Fortunato, R. Martins, and I. Ferreira, "Al-doped ZnO nanostructured powders by emulsion detonation synthesis – Improving materials for high quality sputtering targets manufacturing", J. Eur. Ceram. Soc., vol. 34, issue 10, pp. 2325-2338, 2014. AbstractDOI

Emulsion detonation synthesis method was used to produce undoped and Al-doped ZnO nanostructured powders (0.5–2.0 wt.% Al2O3). The synthesized powders present a controlled composition and a morphology which is independent on the doping level. The XRD results indicate wurtzite as the single phase for undoped ZnO and the presence of gahnite as secondary phase for Al-doped ZnO powders. The sintering behavior of each powder was studied based on their linear shrinkage and shrinkage rate curves, showing the high sinterability of the powders. Activation energies for densification in the earlier stage were calculated for all compositions and possible sintering mechanisms are suggested depending on the doping level. The high chemical homogeneity and sinterability and the lower electrical resistivity of the bulk Al-doped sintered samples demonstrates the feasibility of emulsion detonation synthesis for the production of high quality Al-doped ZnO powders to be used in ceramic sputtering targets manufacture.

Morawiec, S., M. J. Mendes, S. A. Filonovich, T. Mateus, S. Mirabella, H. Águas, I. Ferreira, F. Simone, E. Fortunato, R. Martins, F. Priolo, and I. Crupi, "Broadband photocurrent enhancement in a-Si:H solar cells with plasmonic back reflectors", Opt. Express, vol. 22, issue 104, pp. A1059-A1070, 2014. AbstractDOI

Plasmonic light trapping in thin film silicon solar cells is a promising route to achieve high efficiency with reduced volumes of semiconductor material. In this paper, we study the enhancement in the opto-electronic performance of thin a-Si:H solar cells due to the light scattering effects of plasmonic back reflectors (PBRs), composed of self-assembled silver nanoparticles (NPs), incorporated on the cells’ rear contact. The optical properties of the PBRs are investigated according to the morphology of the NPs, which can be tuned by the fabrication parameters. By analyzing sets of solar cells built on distinct PBRs we show that the photocurrent enhancement achieved in the a-Si:H light trapping window (600 – 800 nm) stays in linear relation with the PBRs diffuse reflection. The best-performing PBRs allow a pronounced broadband photocurrent enhancement in the cells which is attributed not only to the plasmon-assisted light scattering from the NPs but also to the front surface texture originated from the conformal growth of the cell material over the particles. As a result, remarkably high values of Jsc and Voc are achieved in comparison to those previously reported in the literature for the same type of devices.

Contreras, J., R. Martins, P. Wojcik, S. Filonovich, H. Águas, L. Gomes, E. Fortunato, and I. Ferreira, "Color sensing ability of an amorphous silicon position sensitive detector array system", Sensor Actuat. A-Phys., vol. 205, pp. 26-37, 2014. AbstractDOI

The color sensing ability of a data acquisition prototype system integrating a 32 linear array of 1D amorphous silicon position sensitive detectors (PSD) was analyzed. Besides being used to reproduce a 3D profile of highly reflective surfaces, here we show that it can also differentiate primary red, green, blue (RGB) and derived colors. This was realized by using an incident beam with a RGB color combination and adequate integration times taking into account that a color surface mostly reflects its corresponding color. A mean colorimetric error of 25.7 was obtained. Overall, we show that color detection is possible via the use of this sensor array system, composed by a simpler amorphous silicon pin junction.

Loureiro, J., J. R. Santos, A. Nogueira, F. Wyczisk, L. Divay, S. Reparaz, F. Alzina, C. M. S. Torres, J. Cuffe, F. Montemor, R. Martins, and I. Ferreira, "Nanostructured p-type Cr/V2O5 thin films with boosted thermoelectric properties", J. Mater. Chem. A, vol. 2, issue 18, pp. 6456-6462, 2014. AbstractDOI

The urgent need for non-toxic and abundant thermoelectric materials has become a significant motivation to improve the figures of merit of metal oxides in order to remove the barrier towards their widespread use for thermoelectric applications. Here we show the influence of a Cr layer in boosting the thermoelectric properties of vanadium pentoxide (V2O5) thin films, deposited by thermal evaporation and annealed at 500 °C. The Cr to V2O5 thickness ratio controls the morphological and thermoelectric properties of the thin films produced. The optimized Seebeck coefficient and power factor values at room temperature are +50 μV K−1 and 7.9 × 10−4 W m−1 K−2, respectively. The nanograin structure of the films is responsible for an improvement in the electrical conductivity up to 3 × 105 (Ω m)−1 with a typical thermal conductivity of 1.5 W m−1 K−1. These results combine to yield promising p-type thermoeletric CrV2O5 thin films with a ZT of 0.16 at room temperature.

Loureiro, J., N. Neves, R. Barros, T. Mateus, R. Santos, S. Filonovich, S. Reparaz, C. M. S. Torres, F. Wyczisk, L. Divay, R. Martins, and I. Ferreira, "Transparent aluminium zinc oxide thin films with enhanced thermoelectric properties", J. Mater. Chem. A, vol. 2, issue 18, pp. 6649-6655, 2014. AbstractDOI

Improved thermoelectric properties of Aluminum Zinc Oxide (AZO) thin films deposited by radio frequency (RF) and pulsed Direct Current (DC) magnetron sputtering at room temperature are reported. In both techniques films were deposited using sintered and non-sintered targets produced from nano-powders. It is confirmed that both the Al doping concentration and film thickness control the thermoelectric, optical and structural properties of these films. Seebeck coefficients up to −134 μV K−1 and electrical conductivities up to 4 × 104 (Ω m)−1 lead to power factors up to 4 × 10−4 W mK−2, which is above the state-of-the-art for similar materials, almost by a factor of three. The thermoelectric I–V response of an optimized AZO element with a planar geometry was measured and a maximum power output of 2.3 nW, for a temperature gradient of 20 K near room temperature, was obtained. Moreover, the low thermal conductivity (<1.19 W mK−1) yields a ZT value above 0.1. This is an important result as it is at least three times higher than the ZT found in the literature for AZO, at room temperature, opening new doors for applications of this inexpensive, abundant and environmental friendly material, in a new era of thermoelectric devices.