Citation:

Loureiro, J., T. Mateus, S. Filonovich, M. Ferreira, J. Figueira, A. Rodrigues, B. F. Donovan, P. E. Hopkins, and I. Ferreira, "Improved thermoelectric properties of nanocrystalline hydrogenated silicon thin films by post-deposition thermal annealing", Thin Solid Films, vol. 642, pp. 276-280, 2017.

Abstract:

The influence of post-deposition thermal annealing on the thermoelectric properties of n-and p-type nanocrystalline hydrogenated silicon thin films, deposited by plasma enhanced chemical vapour deposition, was studied in this work. The Power Factor of p-type films was improved from 7× 10− 5 to 4× 10− 4 W/(mK 2) as the annealing temperature, under vacuum, increased up to 400° C while for n-type films it has a minor influence. Optimized Seebeck coefficient values of 460 μV/K and− 320 μV/K were achieved for p-and n-type films, respectively, with crystalline size in the range of 10 nm, leading to remarkable low thermal conductivity values (< 10 Wm− 1. K− 1) at room temperature.

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