@article {13379,
	title = {Improved thermoelectric properties of nanocrystalline hydrogenated silicon thin films by post-deposition thermal annealing},
	journal = {Thin Solid Films},
	volume = {642},
	year = {2017},
	pages = {276-280},
	abstract = {<p>The influence of post-deposition thermal annealing on the thermoelectric properties of n-and p-type nanocrystalline hydrogenated silicon thin films, deposited by plasma enhanced chemical vapour deposition, was studied in this work. The Power Factor of p-type films was improved from 7{\texttimes} 10- 5 to 4{\texttimes} 10- 4 W/(mK 2) as the annealing temperature, under vacuum, increased up to 400{\textdegree} C while for n-type films it has a minor influence. Optimized Seebeck coefficient values of 460 μV/K and- 320 μV/K were achieved for p-and n-type films, respectively, with crystalline size in the range of 10 nm, leading to remarkable low thermal conductivity values (\&lt; 10 Wm- 1. K- 1) at room temperature.</p>
},
	url = {https://doi.org/10.1016/j.tsf.2017.09.047},
	author = {Loureiro, J. and T. Mateus and S. Filonovich and M. Ferreira and J. Figueira and Rodrigues, A. and B. F. Donovan and P. E. Hopkins and Ferreira, I.}
}
