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Bianchi, C., J. Loureiro, P. Duarte, J. Marques, J. Figueira, I. Ropio, and I. Ferreira, "V2O5 Thin Films for Flexible and High Sensitivity Transparent Temperature Sensor", Advanced Materials Technologies, vol. 1, issue 6, pp. 1600077, 2016. AbstractDOI

This work reports the optimization of V2O5 Seebeck coefficient to obtain high sensitivity and transparent temperature sensors. It is observed that the film thickness plays a major role on the thermoelectric properties, together with the annealing step, obtaining a Seebeck coefficient of −690 μV K−1, for 75 nm thick V2O5 films deposited on glass, after an annealing step of 1 h at 773 K, in air. The V2O5 films are also deposited and optimized on polyimide substrates, but lower annealing temperature is required, 573 K for 3 h, to maintain the flexibility of the substrate and simultaneously high Seebeck coefficient, −591 μV K−1. These films are used in a simple design sensor and tested on the surface of a microfluidic channel (500 μm) made of polydimethylsiloxane, while having hot water flowing through it. The response time is below 1 s and the recovery time around 5 s.

Bianchi, C., L. M. Ferreira, J. Loureiro, A. Rodrigues, P. Duarte, A. C. Baptista, and I. M. Ferreira, "Vanadium Pentoxide Alloyed with Graphite for Thin-Film Thermal Sensors", J. Electron. Mater., vol. 45, issue 3, pp. 1987–1991, 2016. AbstractDOI

The thermoelectric (TE) properties of vanadium pentoxide (V2O5) alloyed with graphite (G) were studied as a function of its incorporation percentage. Variable weight percentages of graphite powder (0–50%) were added to V2O5 powder and their mixtures were evaporated by a thermal evaporation technique to form thin films with a thickness in the range of 30–80 nm. In the infrared wavelength region, the transmittance of the obtained films increased as the G percentage was increased, while in the visible range, it decreased with G up to 10%. The TE properties were improved when G was in the range of 10–30%, while it decreased for the other percentages: Seebeck coefficient (S) changed from 0.6 mV/K to 0.9 mV/K and was zero with a G of 50%; the electrical conductivity varied slightly from 5 (Ωm)−1 to 0.7 (Ωm)−1 while the mobility improved from 0.07 cm2/V s to 1.5 cm2/V s and the respective carrier concentration was reduced, from 1 × 1018 cm−3 to 4 × 1016 cm−3. These films were applied as temperature sensors evaluating the thermovoltage as a function of thermal gradient between two electrodes, in which one was maintained at room temperature.