Citation:

Ferreira, M., J. Loureiro, A. Nogueira, A. Rodrigues, R. Martins, and I. Ferreira, "SnO2 thin Film Oxides Produced by rf Sputtering for Transparent Thermoelectric Devices", Mater. Today-Proc, vol. 2, issue 2, pp. 647-653, 2015.

Abstract:

The combination of high transparency and good thermoelectric properties of SnO2 can open new field of applications for the thin film thermoelectric materials. Here we report on SnO2 thin films with transmittance above 90%, resistivity bellow 10-3 Ωm and a Power Factor around 10-4 W/m.K2, for a Seebeck of -255 μV/K, at room temperature. The effect of film thickness and post-deposition annealing on the thermoelectric properties were analysed. The performances of a single layer thermoelectric device are also presented.

Related External Link