Publications

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Silva, C, Martins J, Deuermeier J, Pereira M, Rovisco A, Barquinha P, Goes J, Fortunato E, R M, Kiazadeh A.  2021.  Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide. Electronics Material. 2(2):105-115.
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Pereira, M, Deuermeier J, Nogueira R, Carvalho PA, Martins R, Fortunato E, Kiazadeh A.  2020.  Noble‐Metal‐Free Memristive Devices Based on IGZO for Neuromorphic Applications. Advanced electronic Materials. 6(10)
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Kiazadeh, A, Deueurmeier J.  2019.  Flexible and transparent ReRAM devices for system on panel (SOP) application. Advances in Non-Volatile Memory and Storage Technology (Second Edition). (https://doi.org/10.1016/B978-0-08-102584-0.00014-0, Ed.).:519-538., Cambridge: Woodhead-Elsevier
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https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9241358/.  2022.  Emergent solution based IGZO memristor towards neuromorphic applications. Materials Chemistry C. 10(6)
https://www.mdpi.com/2673-3978/2/1/1/htm.  2020.  Ta2O5/SiO2 Multicomponent Dielectrics for Amorphous Oxide TFTs . Electronic Materials. 2(1)
https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.202170047.  2021.  Cover image Advanced Material Journal.
https://doi.org/10.1002/aelm.202200642.  2022.  Flexible Active Crossbar Arrays Using Amorphous Oxide Semiconductor Technology toward Artificial Neural Networks Hardware. Advanced Electronic Materials. :2200642.
https://aip.scitation.org/doi/full/10.1063/5.0098145.  2022.  Characterization and modeling of resistive switching phenomena in IGZO devices. AIP Advances. 12(8)
https://aip.scitation.org/doi/full/10.1063/5.0073056.  2022.  Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks. APL material. (10):1.
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Deuermeier, J, Kiazadeh A, Klein A, Martins R, Fortunato E.  2019.  Multi-level cell properties of a bilayer Cu2O/Al2O3 resistive switching device. Nanomaterials. 9, Number 2 AbstractWebsite
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CasaBranca, N, Deuermeier J, Martins J, Carlos E, Pereira M, Martins R, Fortunato E, Kiazadeh A.  2019.  2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes. Advanced Electronic Materials. AbstractWebsite
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Carvalho, G, Pereira M, Kiazadeh A, Tavares VG.  2021.  A Neural Network Approach towards Generalized Resistive Switching Modelling. Micromachines. 12(9):1132.
Carlos, E, Deuermeier J, Branquinho R, Gaspar C, Martins R, Kiazadeh A, Fortunato E.  2021.  Design and synthesis of low temperature printed metal oxide memristors. Materials Chemistry C. 9:3911–3918.
Carlos, E, Branquinha R, Martins R, Kiazadeh A, Fortunato E.  2021.  Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices. Advanced Material. 33(7):2004328.
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Berg, AI, Brivio S, Brown S, Burr G, Deswal S, Deuermeier J, Gale E, Hwang H, Ielmini D, Indiveri G, Kenyon AJ, Kiazadeh A, Köymen I, Kozicki M, Li Y, Mannion D, Prodromakis T, Ricciardi C, Siegel S, Speckbacher M, Valov I, Wang W, Williams RS, Wouters D, Yang Y.  2019.  Synaptic and neuromorphic functions: General discussion. Faraday Discussions. 213:553-578. AbstractWebsite
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Aono, M, Baeumer C, Bartlett P, Brivio S, Burr G, Burriel M, Carlos E, Deswal S, Deuermeier J, Dittmann R, Du H, Gale E, Hambsch S, Hilgenkamp H, Ielmini D, Kenyon AJ, Kiazadeh A, Kindsmüller A, Kissling G, Köymen I, Menzel S, Pla Asesio D, Prodromakis T, Santamaria M, Shluger A, Thompson D, Valov I, Wang W, Waser R, Williams RS, Wrana D, Wouters D, Yang Y, Zaffora A.  2019.  Valence change ReRAMs (VCM) - Experiments and modelling: General discussion. Faraday Discussions. 213:259-286. AbstractWebsite
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Ambrosi, E, Bartlett P, Berg AI, Brivio S, Burr G, Deswal S, Deuermeier J, Haga M-A, Kiazadeh A, Kissling G, Kozicki M, Foroutan-Nejad C, Gale E, Gonzalez-Velo Y, Goossens A, Goux L, Hasegawa T, Hilgenkamp H, Huang R, Ibrahim S, Ielmini D, Kenyon AJ, Kolosov V, Li Y, Majumdar S, Milano G, Prodromakis T, Raeishosseini N, Rana V, Ricciardi C, Santamaria M, Shluger A, Valov I, Waser R, Stanley Williams R, Wouters D, Yang Y, Zaffora A.  2019.  Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion. Faraday Discussions. 213:115-120. AbstractWebsite
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