2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Citation:
CasaBranca, N, Deuermeier J, Martins J, Carlos E, Pereira M, Martins R, Fortunato E, Kiazadeh A.  2019.  2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes. Advanced Electronic Materials.

Abstract:

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