Publications

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2022
https://aip.scitation.org/doi/full/10.1063/5.0098145.  2022.  Characterization and modeling of resistive switching phenomena in IGZO devices. AIP Advances. 12(8)
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9241358/.  2022.  Emergent solution based IGZO memristor towards neuromorphic applications. Materials Chemistry C. 10(6)
https://doi.org/10.1002/aelm.202200642.  2022.  Flexible Active Crossbar Arrays Using Amorphous Oxide Semiconductor Technology toward Artificial Neural Networks Hardware. Advanced Electronic Materials. :2200642.
https://aip.scitation.org/doi/full/10.1063/5.0073056.  2022.  Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks. APL material. (10):1.
2021
https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.202170047.  2021.  Cover image Advanced Material Journal.
Carlos, E, Deuermeier J, Branquinho R, Gaspar C, Martins R, Kiazadeh A, Fortunato E.  2021.  Design and synthesis of low temperature printed metal oxide memristors. Materials Chemistry C. 9:3911–3918.
Carvalho, G, Pereira M, Kiazadeh A, Tavares VG.  2021.  A Neural Network Approach towards Generalized Resistive Switching Modelling. Micromachines. 12(9):1132.
Carlos, E, Branquinha R, Martins R, Kiazadeh A, Fortunato E.  2021.  Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices. Advanced Material. 33(7):2004328.
Silva, C, Martins J, Deuermeier J, Pereira M, Rovisco A, Barquinha P, Goes J, Fortunato E, R M, Kiazadeh A.  2021.  Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide. Electronics Material. 2(2):105-115.
2020
Pereira, M, Deuermeier J, Nogueira R, Carvalho PA, Martins R, Fortunato E, Kiazadeh A.  2020.  Noble‐Metal‐Free Memristive Devices Based on IGZO for Neuromorphic Applications. Advanced electronic Materials. 6(10)
https://www.mdpi.com/2673-3978/2/1/1/htm.  2020.  Ta2O5/SiO2 Multicomponent Dielectrics for Amorphous Oxide TFTs . Electronic Materials. 2(1)
2019
Kiazadeh, A, Deueurmeier J.  2019.  Flexible and transparent ReRAM devices for system on panel (SOP) application. Advances in Non-Volatile Memory and Storage Technology (Second Edition). (https://doi.org/10.1016/B978-0-08-102584-0.00014-0, Ed.).:519-538., Cambridge: Woodhead-Elsevier
CasaBranca, N, Deuermeier J, Martins J, Carlos E, Pereira M, Martins R, Fortunato E, Kiazadeh A.  2019.  2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes. Advanced Electronic Materials. AbstractWebsite
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Ambrosi, E, Bartlett P, Berg AI, Brivio S, Burr G, Deswal S, Deuermeier J, Haga M-A, Kiazadeh A, Kissling G, Kozicki M, Foroutan-Nejad C, Gale E, Gonzalez-Velo Y, Goossens A, Goux L, Hasegawa T, Hilgenkamp H, Huang R, Ibrahim S, Ielmini D, Kenyon AJ, Kolosov V, Li Y, Majumdar S, Milano G, Prodromakis T, Raeishosseini N, Rana V, Ricciardi C, Santamaria M, Shluger A, Valov I, Waser R, Stanley Williams R, Wouters D, Yang Y, Zaffora A.  2019.  Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion. Faraday Discussions. 213:115-120. AbstractWebsite
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Deuermeier, J, Kiazadeh A, Klein A, Martins R, Fortunato E.  2019.  Multi-level cell properties of a bilayer Cu2O/Al2O3 resistive switching device. Nanomaterials. 9, Number 2 AbstractWebsite
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Berg, AI, Brivio S, Brown S, Burr G, Deswal S, Deuermeier J, Gale E, Hwang H, Ielmini D, Indiveri G, Kenyon AJ, Kiazadeh A, Köymen I, Kozicki M, Li Y, Mannion D, Prodromakis T, Ricciardi C, Siegel S, Speckbacher M, Valov I, Wang W, Williams RS, Wouters D, Yang Y.  2019.  Synaptic and neuromorphic functions: General discussion. Faraday Discussions. 213:553-578. AbstractWebsite
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Aono, M, Baeumer C, Bartlett P, Brivio S, Burr G, Burriel M, Carlos E, Deswal S, Deuermeier J, Dittmann R, Du H, Gale E, Hambsch S, Hilgenkamp H, Ielmini D, Kenyon AJ, Kiazadeh A, Kindsmüller A, Kissling G, Köymen I, Menzel S, Pla Asesio D, Prodromakis T, Santamaria M, Shluger A, Thompson D, Valov I, Wang W, Waser R, Williams RS, Wrana D, Wouters D, Yang Y, Zaffora A.  2019.  Valence change ReRAMs (VCM) - Experiments and modelling: General discussion. Faraday Discussions. 213:259-286. AbstractWebsite
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