(5) Practical guide-memristor

Brain inspired experiments-Short term memory transition to long term memory

(4) Practical guide-memristor

Analog resistive switching device:

Mostly, interface-type RRAM (2D or 3D) shows highly uniform analog switching characteristics that have strong potential for multilevel storage capability.

(3) Practical guide-memristor

Multi-level cell (MLC) approach of RRAM devices


Single-level cell (SLC) means that the device can only store one-bit per cell, and MLC memories can store multiple bits in a single cell. As an example: 4 bit/cell is corresponding to 16 resistance levels.

(2) Practical guide-memristor

 Brain-inspired experiments-STDP

What is the difference between a presynaptic neuron and a postsynaptic neuron?

(1) Practical guide-memristor

 General electrical measurementes

A memristor is a resistive switching device that changes its internal resistance state according to the history of the applied voltage and current. It can be described by a set of equations:

(1) V= R (W, I) I

(2) dW/dt= f (W, T, V, t)

The secret of NDR

S-shaped current-controlled negative differential resistor displays negative resistance in the middle region (red) of its IV curve where an increase in the current results in a decreased voltage. The instant ohmic resistance is still positive.

I-V measurement

SET part of the threshold switching curve of a memristor device.The NDR region following the ON switch (b/c) is only visible using current sweep measurement, but is masked during voltage sweep due to voltage snapback (following the series resistor load line curve in red)
1.Forschungszentrum J¨ulich, Peter Gr¨unberg Institut ,2.RWTH Aachen University