Citation:

Plastic Compatible Sputtered Ta2O5 Sensitive Layer for Oxide Semiconductor TFT Sensors, Branquinho, Rita, {Vaz Pinto} Joana, Busani {Tito Livio}, Barquinha {Pedro Miguel Cândido}, Pereira {Luis Miguel Nunes}, Baptista {Pedro Miguel Ribeiro Viana}, de Martins {Rodrigo Ferrão Paiva}, and Fortunato {Elvira Maria Correia} , Journal Of Display Technology, sep, Volume 9, Number 9, p.723–728, (2013)

Abstract:

The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta2O5 was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 degrees C and crystallize at 700 degrees C in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous Ta2O5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 degrees C pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 degrees C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.

Notes:

Sem PDF conforme Despacho. This work was supported in part by the Portuguese Science and Technology Foundation (FCT), Ministry for Education and Science (MEC), under Project BloodFET PTDC/SAU-BEB/098125/2008 and also by Strategic Project PEst-C/CTM/LA0025/2011. The work of R. Branquinho was supported by INL under a Ph.D. Fellowship. The work of J. V. Pinto was supported by FCT-MCTES under fellowship SFRH/BPD/44874/2008.