Deposition of MoO3 from solution has been optimized from the ground up. Attractive properties are achieved even at low temperatures (200°C). Work functions above 5.2 eV and excellent thickness control via the concentration in solution were obtained. Currently, devices are tested.

ZTO deposition from solution was optimized towards application in memristors. Also here, best performance was obtained with low deposition temperatures (200-250°C). While working between "traditional" Pt and Ti/Au contacts, we are now investigating novel contact materials.