Adenylate kinase (AK) mediates the reversible transfer of phosphate groups between the adenylate nucleotides and contributes to the maintenance of their constant cellular level, necessary for energy metabolism and nucleic acid synthesis. The AK were purified from crude extracts of two sulfate-reducing bacteria (SRB), Desulfovibrio (D.) gigas NCIB 9332 and Desulfovibrio desulfuricans ATCC 27774, and biochemically and spectroscopically characterised in the native and fully cobalt- or zinc-substituted forms. These are the first reported adenylate kinases that bind either zinc or cobalt and are related to the subgroup of metal-containing AK found, in most cases, in Gram-positive bacteria. The electronic absorption spectrum is consistent with tetrahedral coordinated cobalt, predominantly via sulfur ligands, and is supported by EPR. The involvement of three cysteines in cobalt or zinc coordination was confirmed by chemical methods. Extended X-ray absorption fine structure (EXAFS) indicate that cobalt or zinc are bound by three cysteine residues and one histidine in the metal-binding site of the ``LID'' domain. The sequence (129)Cys-X(5)-His-X(15)-Cys-X(2)-Cys of the AK from D. gigas is involved in metal coordination and represents a new type of binding motif that differs from other known zinc-binding sites of AK. Cobalt and zinc play a structural role in stabilizing the LID domain. (C) 2008 Elsevier Inc. All rights reserved.

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In this letter, we report for the first time the use of a sheet of cellulose-fiber-based paper as the dielectric layer used in oxide-based semiconductor thin-film field-effect transis- tors (FETs). In this new approach, we are using the cellulose– fiber-based paper in an “interstrate” structure since the device is built on both sides of the cellulose sheet. Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (> 30 cm2/Vs), drain–source current on/off modulation ratio of approximately 104, near-zero threshold voltage, enhance- ment n-type operation, and subthreshold gate voltage swing of 0.8 V/decade. The cellulose-fiber-based paper FETs’ character- istics have been measured in air ambient conditions and present good stability, after two months of being processed. The obtained results outpace those of amorphous Si thin-film transistors (TFTs) and rival with the same oxide-based TFTs produced on either glass or crystalline silicon substrates. The compatibility of these devices with large-scale/large-area deposition techniques and low– cost substrates as well as their very low operating bias delin- eates this as a promising approach to attain high-performance disposable electronics like paper displays, smart labels, smart packaging, RFID, and point-of-care systems for self-analysis in bioapplications, among others.

Generalised fractional centred differences and derivatives are studied in this chapter. These generalise to real orders the existing ones valid for even and odd positive integer orders. For each one, suitable integral formulations are presented. The limit computation inside the integrals leads to generalisations of the Cauchy derivative. Their computations using a special path lead to the well known Riesz potentials. A study for coherence is done by applying the definitions to functions with Fourier transform. The existence of inverse Riesz potentials is also studied.

Generalised fractional centred differences and derivatives are studied in this chapter. These generalise to real orders the existing ones valid for even and odd positive integer orders. For each one, suitable integral formulations are presented. The limit computation inside the integrals leads to generalisations of the Cauchy derivative. Their computations using a special path lead to the well known Riesz potentials. A study for coherence is done by applying the definitions to functions with Fourier transform. The existence of inverse Riesz potentials is also studied.