Publications

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2022
https://aip.scitation.org/doi/full/10.1063/5.0098145.  2022.  Characterization and modeling of resistive switching phenomena in IGZO devices. AIP Advances. 12(8)
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9241358/.  2022.  Emergent solution based IGZO memristor towards neuromorphic applications. Materials Chemistry C. 10(6)
https://doi.org/10.1002/aelm.202200642.  2022.  Flexible Active Crossbar Arrays Using Amorphous Oxide Semiconductor Technology toward Artificial Neural Networks Hardware. Advanced Electronic Materials. :2200642.
https://aip.scitation.org/doi/full/10.1063/5.0073056.  2022.  Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks. APL material. (10):1.
2021
https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.202170047.  2021.  Cover image Advanced Material Journal.
2020
https://www.mdpi.com/2673-3978/2/1/1/htm.  2020.  Ta2O5/SiO2 Multicomponent Dielectrics for Amorphous Oxide TFTs . Electronic Materials. 2(1)
2019
Kiazadeh, A, Deueurmeier J.  2019.  Flexible and transparent ReRAM devices for system on panel (SOP) application. Advances in Non-Volatile Memory and Storage Technology (Second Edition). (https://doi.org/10.1016/B978-0-08-102584-0.00014-0, Ed.).:519-538., Cambridge: Woodhead-Elsevier
Ambrosi, E, Bartlett P, Berg AI, Brivio S, Burr G, Deswal S, Deuermeier J, Haga M-A, Kiazadeh A, Kissling G, Kozicki M, Foroutan-Nejad C, Gale E, Gonzalez-Velo Y, Goossens A, Goux L, Hasegawa T, Hilgenkamp H, Huang R, Ibrahim S, Ielmini D, Kenyon AJ, Kolosov V, Li Y, Majumdar S, Milano G, Prodromakis T, Raeishosseini N, Rana V, Ricciardi C, Santamaria M, Shluger A, Valov I, Waser R, Stanley Williams R, Wouters D, Yang Y, Zaffora A.  2019.  Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion. Faraday Discussions. 213:115-120. AbstractWebsite
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Berg, AI, Brivio S, Brown S, Burr G, Deswal S, Deuermeier J, Gale E, Hwang H, Ielmini D, Indiveri G, Kenyon AJ, Kiazadeh A, Köymen I, Kozicki M, Li Y, Mannion D, Prodromakis T, Ricciardi C, Siegel S, Speckbacher M, Valov I, Wang W, Williams RS, Wouters D, Yang Y.  2019.  Synaptic and neuromorphic functions: General discussion. Faraday Discussions. 213:553-578. AbstractWebsite
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Aono, M, Baeumer C, Bartlett P, Brivio S, Burr G, Burriel M, Carlos E, Deswal S, Deuermeier J, Dittmann R, Du H, Gale E, Hambsch S, Hilgenkamp H, Ielmini D, Kenyon AJ, Kiazadeh A, Kindsmüller A, Kissling G, Köymen I, Menzel S, Pla Asesio D, Prodromakis T, Santamaria M, Shluger A, Thompson D, Valov I, Wang W, Waser R, Williams RS, Wrana D, Wouters D, Yang Y, Zaffora A.  2019.  Valence change ReRAMs (VCM) - Experiments and modelling: General discussion. Faraday Discussions. 213:259-286. AbstractWebsite
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