Objectives

In this project besides the development of MOS (both n­ and p­types) base on metal oxide semiconductors, we want also to apply them to a new class of electronic components to fabricate a novel generation of fully transparent electronic devices and circuits, either using rigid or flexible substrates like polymers and paper. The emphasis will be put on developing TFTs/ICs for a broad range of applications (inverters, C­ MOS, ring oscillators, biosensor arrays for DNA/RNA/proteins detection and electrochromic transistors), boosting to its maximum their electronic performance for next generation of ICs without Si or other conventional semiconductor, with ability to be fully flexible and conformable, where invisibility could be an added value. By doing so, we are contributing for generating a free real state electronics that is able to add new electronic functionalities onto surfaces, which currently are not used in this manner and that Si cannot contribute.