Task 2

Fabrication of memristor devices by solution processing:

The memristor devices can be fabricated by a low-cost solution-based process.This deposition technology supports both transistors and memristors by using the same dielectric/semiconductor material of TFTs as the resistive switching layer. Processing will result in highly cost-effective system integration.

Brief description of results- 1st october 2019
1. Filament-based (1D) RRAM device based on oxygen deficient Al2O3 switching layer was fully studied.(see the publication)
2. Thin film transistors based on solution-based IGZO was fabricated and optimized.(see the publication)

Problem formulation:
Device to device variations due to solution processing and also because of electroforming step.

Addressing the problems:
A mixed layer of HfOx and ALOx and ZrOx is under study to investigate better resistive switching performance.