<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ullaha, S</style></author><author><style face="normal" font="default" size="100%">Matteis, F De</style></author><author><style face="normal" font="default" size="100%">R. Branquinho</style></author><author><style face="normal" font="default" size="100%">E. Fortunato</style></author><author><style face="normal" font="default" size="100%">R. Martins</style></author><author><style face="normal" font="default" size="100%">Davoli, I</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">{A combination of solution synthesis solution combustion synthesis for highly conducting and transparent Aluminum Zinc Oxide thin films}</style></title><secondary-title><style face="normal" font="default" size="100%">2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">2-methoxyethanol</style></keyword><keyword><style  face="normal" font="default" size="100%">aluminium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">aluminum oxide formation</style></keyword><keyword><style  face="normal" font="default" size="100%">Annealing</style></keyword><keyword><style  face="normal" font="default" size="100%">AZO</style></keyword><keyword><style  face="normal" font="default" size="100%">Combustion</style></keyword><keyword><style  face="normal" font="default" size="100%">combustion synthesis</style></keyword><keyword><style  face="normal" font="default" size="100%">conductivity</style></keyword><keyword><style  face="normal" font="default" size="100%">dopant concentrations</style></keyword><keyword><style  face="normal" font="default" size="100%">dopant source</style></keyword><keyword><style  face="normal" font="default" size="100%">film stacks</style></keyword><keyword><style  face="normal" font="default" size="100%">Hall effect</style></keyword><keyword><style  face="normal" font="default" size="100%">Hall effect resistivity</style></keyword><keyword><style  face="normal" font="default" size="100%">heating</style></keyword><keyword><style  face="normal" font="default" size="100%">highly conducting thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">metal source</style></keyword><keyword><style  face="normal" font="default" size="100%">Optical films</style></keyword><keyword><style  face="normal" font="default" size="100%">Optical mixing</style></keyword><keyword><style  face="normal" font="default" size="100%">optoelectronic applications</style></keyword><keyword><style  face="normal" font="default" size="100%">precursor solutions</style></keyword><keyword><style  face="normal" font="default" size="100%">rapid thermal annealing</style></keyword><keyword><style  face="normal" font="default" size="100%">semiconductor thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">solution combustion synthesis</style></keyword><keyword><style  face="normal" font="default" size="100%">solvent</style></keyword><keyword><style  face="normal" font="default" size="100%">spin coating</style></keyword><keyword><style  face="normal" font="default" size="100%">spin-coating</style></keyword><keyword><style  face="normal" font="default" size="100%">temperature 400 C</style></keyword><keyword><style  face="normal" font="default" size="100%">temperature 500 C</style></keyword><keyword><style  face="normal" font="default" size="100%">temperature 600 C</style></keyword><keyword><style  face="normal" font="default" size="100%">time 1 h</style></keyword><keyword><style  face="normal" font="default" size="100%">time 10 min</style></keyword><keyword><style  face="normal" font="default" size="100%">transparent aluminum zinc oxide thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">transparent conducting oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">transparent conducting tin oxide films</style></keyword><keyword><style  face="normal" font="default" size="100%">wavelength 400 nm to 1200 nm</style></keyword><keyword><style  face="normal" font="default" size="100%">zinc compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">Zinc oxide</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2015</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">internal-pdf://0.0.2.154/abs{\_}all.html</style></url></web-urls></urls><pages><style face="normal" font="default" size="100%">144–147</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Aluminum Zinc Oxide has been extensively investigated as a cheap alternative to transparent conducting tin oxide films for electronic and optoelectronic applications. Thin films of Aluminum Zinc Oxide have been developed successfully through a combination of solution combustion synthesis and solution synthesis. Zn(NO3)3·6H2O as metal source was dissolved in 2-methoxyethanol as solvent through combustion synthesis with Urea as fuel while dopant source of AlCl3·6H2O was mixed separately in solvent to avoid aluminum oxide formation in the films. Precursor solutions were obtained mixing Zn {&amp;amp;} Al separate solutions in 9:1, 8:2, and 7:3 ratios respectively with oxide, fuel and dopant concentrations of 0.5, 0.25, 0.1, and 0.05 M. The film stacks have been prepared through spin-coating with heating at 400°C for 10 minutes after each deposition to remove residuals and evaporate solvents. Thermal annealing in oven at 600°C for 1 hour followed by rapid thermal annealing at 500°C {&amp;amp;} 600°C first in vacuum and then in N2-5{%}H2 environment respectively for 10 minutes each reduced the resistivity of film stacks. Film stack with 10 layers for an average thickness of 0.5$μ$m gave the best Hall Effect resistivity of 3.2 × 10-2 $Ømega$-cm in the case of 0.5M solution with Zn:Al mixing ratio of 9:1 for RTA annealings at 600°C with an average total transparency of 80 {%} in the wavelength range of 400-1200 nm. The results show a clear trend that increasing the amount of ingredients resistivity could further be decreased.&lt;/p&gt;
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