@article {Liu2014,
	title = {{High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric}},
	journal = {Applied Physics Letters},
	volume = {105},
	number = {11},
	year = {2014},
	note = {n/a},
	pages = {113509},
	abstract = {<p>In this study, we report high-performance amorphous In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using an ultra-thin solution-processed amorphous ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the charge accumulation and yielding high carrier mobility. A thick amorphous layer of InZnO controls the charge conductance resulting in low off-state current and suitable threshold voltage. As a consequence, the BMO TFT showed higher filed-effect mobility (37.9 cm2/V s) than single-layer InZnO TFT (7.6 cm2/V s). Apart from that we obtain an on/off current ratio of 109, a subthreshold swing voltage of 120 mV/decade, and a voltage shift <= 0.4 V under positive bias stress for 2.5 h, for a gate voltage of 3 V and drain voltage of 1 V. These data demonstrate that the BMO TFT has great potential for a broad range of applications as switching low-power transistors.</p>
},
	keywords = {Amorphous metals, Carrier mobility, Dielectric thin films, Ozone, Thin film transistors},
	isbn = {0003-6951, 1077-3118},
	doi = {10.1063/1.4895782},
	url = {http://scitation.aip.org/content/aip/journal/apl/105/11/10.1063/1.4895782 internal-pdf://0.0.2.46/1.html internal-pdf://0.0.2.49/1.html},
	author = {Liu, G X and Liu, A and Shan, F K and Meng, Y and Shin, B C and E. Fortunato and R. Martins}
}
