@article {Besleaga2016,
	title = {{Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor}},
	journal = {Applied Surface Science},
	volume = {379},
	year = {2016},
	note = {n/a},
	pages = {270{\textendash}276},
	abstract = {<p>The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium{\textendash}gallium{\textendash}zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium{\textendash}gallium{\textendash}zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.</p>
},
	keywords = {Aluminum nitride, Field-effect transistors, Indium{\textendash}gallium{\textendash}zinc-oxide, Transparent electronics},
	isbn = {0169-4332},
	doi = {10.1016/j.apsusc.2016.04.083},
	url = {http://www.sciencedirect.com/science/article/pii/S0169433216308339 http://www.sciencedirect.com/science/article/pii/S0169433216308339/pdfft?md5=0a8d1884d500495dc037845854c92f1e{\&}pid=1-s2.0-S0169433216308339-main.pdf internal-pdf://0.0.1.99/S0169433216308},
	author = {Besleaga, C and Stan, G E and Pintilie, I and P. Barquinha and E. Fortunato and R. Martins}
}
