@article {Bahubalindruni2016,
	title = {{InGaZnO Thin Film Transistor Based Four-Quadrant High-Gain Analog Multiplier on Glass}},
	journal = {IEEE Electron Device Letters},
	year = {2016},
	note = {n/a},
	pages = {1{\textendash}1},
	abstract = {n/a},
	keywords = {a-IGZO TFT, active load, analogue multipliers, capacitance 4 pF, data communication, diode-connected load, four quadrant high gain analog multiplier, Frequency response, Gain, gain 7.2 dB, gallium compounds, Gilbert cell, Glass, harmonic distortion, indium compounds, InGaZnO, Linearity, Logic gates, Multipliers, positive feedback, readout systems, signal processing building block, temperature 200 degC, thin film transistor, Thin film transistors, total harmonic distortion, voltage 15 V, zinc compounds},
	isbn = {0741-3106},
	doi = {10.1109/LED.2016.2535469},
	url = {http://ieeexplore.ieee.org/articleDetails.jsp?arnumber=7421979 internal-pdf://0.0.0.161/Bahubalindruni et al. - 2016 - InGaZnO Thin-Film-Transistor-Based Four-Quadrant H.html internal-pdf://0.0.1.130/abs{\_}all.html},
	author = {Bahubalindruni, Pydi and Tavares, Vitor and Borme, Jerome and Barquinha, Pedro and Oliveira, Pedro and Elvira Fortunato and Rodrigo Martins}
}
