@article {doi:10.1021/acsami.6b12753, title = {Optimization of Cuprous Oxides Thin Films to be used as Thermoelectric Touch Detectors}, journal = {ACS Applied Materials \& Interfaces}, volume = {9}, number = {7}, year = {2017}, note = {

PMID: 28111939

}, pages = {6520-6529}, abstract = {

The electronic and optical properties of p-type copper oxides (CO) strongly depend on the production technique as it influences the obtained phases: cuprous oxide (Cu2O) or cupric oxide (CuO), the most common ones. Cu films deposited by thermal evaporation have been annealed in air atmosphere, with temperature between 225 and 375 {\textdegree}C and time between 1 and 4 h. The resultant CO films have been studied to understand the influence of processing parameters in the thermoelectric, electrical, optical, morphological, and structural properties. Films with a Cu2O single phase are formed when annealing at 225 {\textdegree}C, while CuO single phase films can be obtained at 375 {\textdegree}C. In between, both phases are obtained in proportions that depend on the film thickness and annealing time. The positive sign of the Seebeck coefficient (S), measured at room temperature (RT), confirms the p-type behavior of both oxides, showing values up to 1.2 mV{\textperiodcentered}{\textdegree}C{\textendash}1 and conductivity up to 2.9 (Ω{\textperiodcentered}m)-1. A simple detector using Cu2O have been fabricated and tested with fast finger touch events.

}, doi = {10.1021/acsami.6b12753}, url = {https://doi.org/10.1021/acsami.6b12753}, author = {Figueira, Joana and Loureiro, Joana and Marques, Jos{\'e} and Bianchi, Catarina and Paulo Duarte and Ruoho, Mikko and Tittonen, Ilkka and Ferreira, Isabel} }