@article {13443,
	title = {Hydrogenated nanocrystalline silicon thin films with promising thermoelectric properties},
	journal = {Appl. Phys. A},
	volume = {120},
	year = {2015},
	pages = {1497{\textendash}1502},
	abstract = {<p>The search for materials with suitable thermoelectric properties that are environmentally friendly and abundant led us to investigate p- and n-type hydrogenated nanocrystalline silicon (nc-Si:H) thin films, produced by plasma-enhanced chemical vapor deposition. The Seebeck coefficient and power factor were measured at room temperature showing optimized values of 512 {\textmu}V K-1 and 3.6 {\texttimes} 10-5 W m-1 K-2, for p-type, and -188 {\textmu}V K-1 and 2.2 {\texttimes} 10-4 W m-1 K-2, for n-type thin films. The thermoelectric output power of one nc-Si:H pair of both n- and p-type materials is ~91 {\textmu}W per material cm3, for a thermal gradient of 8 K. The output voltage and current values show a linear dependence with the number of pairs interconnected in series and/or parallel and show good integration performance.</p>
},
	url = {https://doi.org/10.1007/s00339-015-9343-5},
	author = {Loureiro, J. and T. Mateus and S. Filonovich and M. Ferreira and J. Figueira and Rodrigues, A. and B. F. Donovan and P. E. Hopkins and Ferreira, I.}
}
