@article {13376,
	title = {CuI p-type thin films for highly transparent thermoelectric pn modules},
	journal = {Sci Rep},
	volume = {8},
	year = {2018},
	pages = {6867-6867},
	abstract = {<p>Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials {\textendash} a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (\&gt;70\% in the visible range), electrical (σ = 1.1 {\texttimes} 104 Sm-1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.</p>
},
	url = {https://doi.org/10.1038/s41598-018-25106-3},
	author = {B. M. M. Faustino and Gomes, D. and Faria, J. and T. Juntunen and G. Gaspar and Bianchi, C. and Almeida, A. and Marques, AC and I. Tittonen and Ferreira, I.}
}
