Loureiro, J., T. Mateus, S. Filonovich, M. Ferreira, J. Figueira, A. Rodrigues, B. F. Donovan, P. E. Hopkins, and I. Ferreira,
"Improved thermoelectric properties of nanocrystalline hydrogenated silicon thin films by post-deposition thermal annealing",
Thin Solid Films, vol. 642, pp. 276-280, 2017.
AbstractThe influence of post-deposition thermal annealing on the thermoelectric properties of n-and p-type nanocrystalline hydrogenated silicon thin films, deposited by plasma enhanced chemical vapour deposition, was studied in this work. The Power Factor of p-type films was improved from 7× 10− 5 to 4× 10− 4 W/(mK 2) as the annealing temperature, under vacuum, increased up to 400° C while for n-type films it has a minor influence. Optimized Seebeck coefficient values of 460 μV/K and− 320 μV/K were achieved for p-and n-type films, respectively, with crystalline size in the range of 10 nm, leading to remarkable low thermal conductivity values (< 10 Wm− 1. K− 1) at room temperature.
Figueira, J., J. Loureiro, J. Marques, C. Bianchi, P. Duarte, M. Ruoho, I. Tittonen, and I. Ferreira,
"Optimization of Cuprous Oxides Thin Films to be used as Thermoelectric Touch Detectors",
ACS Appl Mater Interfaces, vol. 9, issue 7, pp. 6520-6529, 2017.
AbstractThe electronic and optical properties of p-type copper oxides (CO) strongly depend on the production technique as it influences the obtained phases: cuprous oxide (Cu2O) or cupric oxide (CuO), the most common ones. Cu films deposited by thermal evaporation have been annealed in air atmosphere, with temperature between 225 and 375 °C and time between 1 and 4 h. The resultant CO films have been studied to understand the influence of processing parameters in the thermoelectric, electrical, optical, morphological, and structural properties. Films with a Cu2O single phase are formed when annealing at 225 °C, while CuO single phase films can be obtained at 375 °C. In between, both phases are obtained in proportions that depend on the film thickness and annealing time. The positive sign of the Seebeck coefficient (S), measured at room temperature (RT), confirms the p-type behavior of both oxides, showing values up to 1.2 mV·°C–1and conductivity up to 2.9 (Ω·m)−1. A simple detector using Cu2O have been fabricated and tested with fast finger touch events
Sousa, D. M., J. C. Lima, and I. Ferreira,
"Synthesis of Cadmium Selenide Quantum Dots, Using 2, 2‐Bipyridine as a Capping and Phase Transfer Agent",
ChemistrySelect, vol. 2, issue 3, pp. 1271-1274, 2017.
AbstractCadmium selenide quantum dots (CdSe QDs), were synthesized by one‐pot or water‐to‐organic phase transfer and capped with molten 2,2′‐bipyridine (bipy). The obtained CdSe QDs by the two‐step procedure, reveal average sizes of 2 nm while the one‐pot are mixed with secondary salt products and bipy and are undetectable by TEM. However the absorption peak of both CdSe QDs was at 425 nm and the emission band is centered at 535 nm, with a band width at half height of 77 nm, when excited with 425 nm light. The two‐step CdSe QDs synthesis has the great advantage of capping the CdSe QDs with bipy, forming a solid phase, which is easily stored and dispersed in most of the organic solvents. On the other hand, the one‐pot procedure requires an extra step to remove the secondary products.