{Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors} | Multifunctional Nanoscale Oxide Materials

{Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors}

Citation:: Kiazadeh, A, Gomes HL, Barquinha P, Martins J, Rovisco A, Pinto JV, Martins R, Fortunato E. 2016. {Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors}. APPLIED PHYSICS LETTERS. 109, Number 5

Abstract:

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